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Product Specification
PE4231
Product Description
The PE4231 SPDT High Power UltraCMOS? RF Switch is
designed to cover a broad range of applications from DC to 1.3
GHz. This single-supply reflective switch integrates on-board
CMOS control logic driven by a simple, single-pin CMOS or
TTL compatible control input. Using a nominal +3-volt power
supply, a typical input 1 dB compression point of +32 dBm can
be achieved. The PE4231 also exhibits input-output isolation of
better than 42 dB at 1.0 GHz and is offered in a small 8-lead
MSOP package.
The PE4231 SPDT High Power UltraCMOS? RF Switch is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi ? ) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
SPDT High Power UltraCMOS?
DC – 1.3 GHz RF Switch
Features
? Optimized for 75 ? systems
? Single +3-volt power supply
? Low insertion loss: 0.80 dB at 1.0 GHz
? High isolation: 42 dB at 1.0 GHz
? Typical input 1 dB compression point of
+32 dBm
? Single-pin CMOS or TTL logic control
? Low cost
Figure 1. Functional Diagram
RFCommon
RF1
RF2
Figure 2. Package Type
8-lead MSOP
CMOS
Control
Driver
CTRL
Table 1. Electrical Specifications @ +25 °C, V DD = 3 V (Z S = Z L = 75 ? )
Parameter
Conditions
Minimum
Typical
Maximum
Units
Operation Frequency
Insertion Loss
1
50 MHz
1000 MHz
DC
0.50
0.80
1300
0.60
0.90
MHz
dB
Input 1 dB Compression
Input IP3
Isolation – RFCommon to
RF1/RF2
Isolation – RF1 to RF2
Return Loss
‘ON’ Switching Time
‘OFF’ Switching Time
2
Video Feedthrough
3
3
50 MHz
1000 MHz
50 MHz
1000 MHz
1000 MHz
CTRL to 0.1 dB final value, 2 GHz
CTRL to 25 dB isolation, 2 GHz
1000 MHz
1000 MHz, 17 dBm
73
40
58
33
16
30
50
75
42
60
35
17
2000
900
15
32
dB
dB
dB
ns
ns
mV pp
dBm
dBm
Notes:
1. Device linearity will begin to degrade below 1 MHz.
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.
3. Measured in a 50 ? system.
Document No. 70-0097-01 │ www.psemi.com
?2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 7
Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
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